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• W2913968695 abstract "An ultra-thin (15 nm) InGaAs nanomembrane field-effect phototransistor is transferred entirely from a rigid InP substrate onto a flexible SU-8 on a polydimethylsiloxane substrate. The transferred InGaAs device exhibits wide-band spectral response tunability up to 1.8 µm, from the visible to near-infrared light. Using an epitaxial lift-off process of InGaAs-on-InP MOSHEMT, the transferred device is inverted with a fully exposed channel for photosensitivity enhancement, while retaining three terminals for photocurrent amplification and modulation. The photocurrent can be tuned ∼5 orders over a gate bias range of 6 V. On-state photo-responsivities of 350 A/W to 15 A/W for 0.6 µm and 1.8 µm of light, respectively, is measured, ∼2 × higher than existing silicon and III-V photodetectors. Furthermore, the device shows no electrical performance degradation when flexed down to 10-cm radius, demonstrating suitability for conformal surface sensor applications." @default.
• W2913968695 created "2019-02-21" @default.
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• W2913968695 date "2019-02-06" @default.
• W2913968695 modified "2023-10-05" @default.
• W2913968695 title "A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications" @default.
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• W2913968695 doi "https://doi.org/10.1063/1.5074181" @default.
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