FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2914225467> ?p ?o ?g. }

• W2914225467 endingPage "1800720" @default.
• W2914225467 startingPage "1800720" @default.
• W2914225467 abstract "Due to high carrier mobility and excellent air stability, emerging 2D semiconducting Bi2O2Se is attracting much attention as a potential channel candidate for the next-generation field effect transistor (FETs). Although the fabricated bilayer (BL) and few layers Bi2O2Se FETs exhibit a large current on/off ratio (>106) and a near-ideal subthreshold swing value (≈65 mV dec−1), the performance limit of ultrashort channel Bi2O2Se FET is obscure. Here the ballistic performance upper limit of the sub 10 nm BL Bi2O2Se metal-oxide-semiconductor FETs (MOSFETs) is simulated for the first time by using ab initio quantum transport simulations. The optimized BL Bi2O2Se n-type MOSFETs can fulfill the high performance device requirements on the on-state current, delay time, and power dissipation of the International Technology Roadmap for Semiconductors in 2028 until the gate length is scaled down to 5 nm. Therefore, Moore's law can be extended to 5 nm by taking BL Bi2O2Se as the channel." @default.
• W2914225467 created "2019-02-21" @default.
• W2914225467 creator A5008200376 @default.
• W2914225467 creator A5021905687 @default.
• W2914225467 creator A5034169829 @default.
• W2914225467 creator A5035574012 @default.
• W2914225467 creator A5036427590 @default.
• W2914225467 creator A5046049923 @default.
• W2914225467 creator A5050852420 @default.
• W2914225467 creator A5052764776 @default.
• W2914225467 creator A5065115366 @default.
• W2914225467 creator A5065163616 @default.
• W2914225467 creator A5078442427 @default.
• W2914225467 creator A5083474841 @default.
• W2914225467 creator A5083965647 @default.
• W2914225467 creator A5086753171 @default.
• W2914225467 creator A5089706975 @default.
• W2914225467 creator A5091086298 @default.
• W2914225467 date "2019-02-04" @default.
• W2914225467 modified "2023-10-17" @default.
• W2914225467 title "Sub 10 nm Bilayer Bi ₂ O ₂ Se Transistors" @default.
• W2914225467 cites W1506419662 @default.
• W2914225467 cites W1508961516 @default.
• W2914225467 cites W1569225553 @default.
• W2914225467 cites W1588887024 @default.
• W2914225467 cites W1966150059 @default.
• W2914225467 cites W1978905540 @default.
• W2914225467 cites W1981368803 @default.
• W2914225467 cites W1985252301 @default.
• W2914225467 cites W2000592881 @default.
• W2914225467 cites W2008604412 @default.
• W2914225467 cites W2008690768 @default.
• W2914225467 cites W2009029869 @default.
• W2914225467 cites W2014935324 @default.
• W2914225467 cites W2048199597 @default.
• W2914225467 cites W2052940807 @default.
• W2914225467 cites W2078010004 @default.
• W2914225467 cites W2086880071 @default.
• W2914225467 cites W2101787945 @default.
• W2914225467 cites W2123510151 @default.
• W2914225467 cites W2129515233 @default.
• W2914225467 cites W2135037917 @default.
• W2914225467 cites W2150315430 @default.
• W2914225467 cites W2175116097 @default.
• W2914225467 cites W2203584393 @default.
• W2914225467 cites W2293428877 @default.
• W2914225467 cites W2432559505 @default.
• W2914225467 cites W2485692090 @default.
• W2914225467 cites W2516109291 @default.
• W2914225467 cites W2528423716 @default.
• W2914225467 cites W2569300356 @default.
• W2914225467 cites W2574149780 @default.
• W2914225467 cites W2577264973 @default.
• W2914225467 cites W2594232850 @default.
• W2914225467 cites W2603962089 @default.
• W2914225467 cites W2605161001 @default.
• W2914225467 cites W2606947334 @default.
• W2914225467 cites W2737046627 @default.
• W2914225467 cites W2742508318 @default.
• W2914225467 cites W2749975199 @default.
• W2914225467 cites W2754712881 @default.
• W2914225467 cites W2760895430 @default.
• W2914225467 cites W2783493167 @default.
• W2914225467 cites W2800253033 @default.
• W2914225467 cites W2800656714 @default.
• W2914225467 cites W2802760331 @default.
• W2914225467 cites W2806705367 @default.
• W2914225467 cites W2809068662 @default.
• W2914225467 cites W2885236798 @default.
• W2914225467 cites W2885731584 @default.
• W2914225467 cites W2902721930 @default.
• W2914225467 cites W3101747384 @default.
• W2914225467 cites W3102188392 @default.
• W2914225467 cites W3104283690 @default.
• W2914225467 cites W3105112747 @default.
• W2914225467 cites W3147650139 @default.
• W2914225467 cites W4211172053 @default.
• W2914225467 cites W656433898 @default.
• W2914225467 doi "https://doi.org/10.1002/aelm.201800720" @default.
• W2914225467 hasPublicationYear "2019" @default.
• W2914225467 type Work @default.
• W2914225467 sameAs 2914225467 @default.
• W2914225467 citedByCount "59" @default.
• W2914225467 countsByYear W29142254672019 @default.
• W2914225467 countsByYear W29142254672020 @default.
• W2914225467 countsByYear W29142254672021 @default.
• W2914225467 countsByYear W29142254672022 @default.
• W2914225467 countsByYear W29142254672023 @default.
• W2914225467 crossrefType "journal-article" @default.
• W2914225467 hasAuthorship W2914225467A5008200376 @default.
• W2914225467 hasAuthorship W2914225467A5021905687 @default.
• W2914225467 hasAuthorship W2914225467A5034169829 @default.
• W2914225467 hasAuthorship W2914225467A5035574012 @default.
• W2914225467 hasAuthorship W2914225467A5036427590 @default.
• W2914225467 hasAuthorship W2914225467A5046049923 @default.
• W2914225467 hasAuthorship W2914225467A5050852420 @default.
• W2914225467 hasAuthorship W2914225467A5052764776 @default.
• W2914225467 hasAuthorship W2914225467A5065115366 @default.

• next