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- W2914243607 abstract "Until now, organic semiconductors have failed to achieve high performance in highly integrated, sub-100 nm transistors. Consequently, single-crystalline materials such as single-walled carbon nanotubes, MoS2 or inorganic semiconductors are the materials of choice at the nanoscale. Here we show, using a vertical field-effect transistor design with a channel length of only 40 nm and a footprint of 2 × 80 × 80 nm2, that high electrical performance with organic polymers can be realized when using electrolyte gating. Our organic transistors combine high on-state current densities of above 3 MA cm−2, on/off current modulation ratios of up to 108 and large transconductances of up to 5,000 S m−1. Given the high on-state currents at such large on/off ratios, our novel structures also show promise for use in artificial neural networks, where they could operate as memristive devices with sub-100 fJ energy usage. A vertical, electrolyte-gated organic transistor shows high on-state current densities, large on/off ratio and the potential for use in artificial neural networks." @default.
- W2914243607 created "2019-02-21" @default.
- W2914243607 creator A5035128957 @default.
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- W2914243607 date "2019-03-18" @default.
- W2914243607 modified "2023-10-17" @default.
- W2914243607 title "Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm−2 regime and artificial synaptic behaviour" @default.
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- W2914243607 doi "https://doi.org/10.1038/s41565-019-0407-0" @default.
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