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• W2914638634 abstract "A structure of p-Si/Al 2 O 3 /(Bi 2 O 3 )[Formula: see text](ZrO 2 )[Formula: see text](BZO)/Al 2 O 3 /Pt has been fabricated as Nanocrystal Charge Trapping Memory (NCTM), where the double nanocrystals (NCs) of Bi 2 O 3 and ZrO 2 generated in BZO charge trapping layer (CTL) through rapid temperature annealing (RTA). A large memory window (MW) of [Formula: see text]8.6[Formula: see text]V and high defect traps of [Formula: see text][Formula: see text]cm[Formula: see text] were obtained at a low sweeping voltages of [Formula: see text]8[Formula: see text]V after 800 ∘ C for 90[Formula: see text]s in O 2 ambient. The devices of different RTA conditions were investigated to analyze the process of NCs traps formation by the X-ray diffraction and X-ray photoelectron spectroscopy. Excellent retention characteristics of the room temperature were observed after 10 4 [Formula: see text]s because of the deep defect traps and high quantum wells between CTL and tunneling oxide layer (TOL)." @default.
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• W2914638634 date "2019-08-01" @default.
• W2914638634 modified "2023-09-24" @default.
• W2914638634 title "Enhanced charge storage capability of (Bi₂O₃)0.4(ZrO₂)0.6 charge trapping layer in nanocrystal memory devices" @default.
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• W2914638634 doi "https://doi.org/10.1142/s1793604719500462" @default.
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