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- W2914652394 abstract "This paper reports a planar structure InGaAs/InP avalanche photodetector focal plane arrays. Their material structure use separate absorption, grading, charge and multiplication layer. The pixel pitch of 8×8 format detectors is 250 μm. The breakdown voltage (VBD) is typically in the range of 65 to 70 V for most of the devices on the same wafer. The typical dark current at 90% of VBD is 3 nA, dark currents as low as 0.5 nA at 90% of VBD have also been observed for some diodes, corresponding to a dark current density of 1 × 10-5 A/cm2. The photocurrent starts to increase at the punch-through voltage Vp of 43 V. The responsivity at 1.55 μm is 0.91 A/W at unity gain and the multiplication layer is estimated to be 1.2 μm. Each device on the same wafer has excellent characteristics and high uniformity through measurement, laying a solid foundation for 3D imaging laser radar systems." @default.
- W2914652394 created "2019-02-21" @default.
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- W2914652394 date "2019-02-08" @default.
- W2914652394 modified "2023-09-25" @default.
- W2914652394 title "8 x 8 format InGaAs/InP avalanche photodiode plane array for 3D imaging laser radar system" @default.
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- W2914652394 doi "https://doi.org/10.1117/12.2504875" @default.
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