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- W2914751462 abstract "La-doped BaSnO3 has been epitaxially integrated with (001) Si using an SrTiO3 buffer layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO3 buffer layer was grown to enhance the mobility of the overlying La-doped BaSnO3 layer. The x-ray diffraction rocking curve of the BaSnO3 002 peak has a full width at half maximum of 0.02°. At room temperature, the resistivity of the La-doped BaSnO3 film is 3.6 × 10−4 Ω cm and the mobility is 128 cm2 V−1 s−1 at a carrier concentration of 1.4 × 1020 cm−3. These values compare favorably to those of La-doped BaSnO3 films grown by all techniques other than MBE on single-crystal oxide substrates. Our work opens an exciting arena for integrating hyper-functional oxide electronics that make use of high-mobility oxide films with the workhorse of the semiconductor industry, silicon." @default.
- W2914751462 created "2019-02-21" @default.
- W2914751462 creator A5016496386 @default.
- W2914751462 creator A5042016235 @default.
- W2914751462 creator A5056053058 @default.
- W2914751462 creator A5066447005 @default.
- W2914751462 creator A5088799362 @default.
- W2914751462 date "2019-01-22" @default.
- W2914751462 modified "2023-09-25" @default.
- W2914751462 title "Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon" @default.
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- W2914751462 doi "https://doi.org/10.1063/1.5054810" @default.
- W2914751462 hasPublicationYear "2019" @default.