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• W2914884675 abstract "We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO2-based threshold switching devices in series with the source. The SiO2-based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 105 in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10-5 μA μm-1) and a high I ON/I OFF ratio (>107). Moreover, with the SiO2-based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. This steep-slope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III-V and are of potential interest for the development of power switching and high frequency devices." @default.
• W2914884675 created "2019-02-21" @default.
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• W2914884675 date "2019-03-13" @default.
• W2914884675 modified "2023-09-23" @default.
• W2914884675 title "Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device" @default.
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• W2914884675 doi "https://doi.org/10.1088/1361-6528/ab0484" @default.
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