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- W2914894969 abstract "We report on a novel silicon nanowire-based field effect transistor with integrated ferroelectric gate oxide. The concept allows tuning the carrier transport in a non-volatile approach by switching the polarization in the ferroelectric layer close to the source Schottky-junction. We interpret the results in terms of tuning the transmissibility of the Schottky-junction for charge carriers. The experimental results provide a first step towards the integration of memory-in-logic concepts with reconfigurable nanowire transistors." @default.
- W2914894969 created "2019-02-21" @default.
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- W2914894969 date "2018-07-01" @default.
- W2914894969 modified "2023-09-25" @default.
- W2914894969 title "Junction Tuning by Ferroelectric Switching in Silicon Nanowire Schottky-Barrier Field Effect Transistors" @default.
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- W2914894969 doi "https://doi.org/10.1109/nano.2018.8626257" @default.
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