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- W2915679269 abstract "A bipolar, highly nonlinear n-p-n selector is coupled in series with resistive switching memory device to suppress the sneak path current. The memory characteristics are measured for the crossbar array fabricated on a flexible polyethylene terephthalate substrate. Dominant conduction mechanism is the Zener tunneling to obtain the high nonlinearity in the selector device. This phenomenon validates the ${I}$ – ${V}$ characteristics which are temperature dependent, which leads to decrease in the turn-on voltage of the device as the temperature increases. The proposed one bipolar selector-one resistor device demonstrates better memory characteristics with the high nonlinearity ( $sim 10^{textsf {3}}$ ), observable memory window of about one order, excellent ac endurance ( $10^{textsf {7}}$ ) cycles, fast switching speed (60 ns), and stable retention ( $10^{textsf {4}}$ s) at 100 °C. The results show the substantial potential of the proposed one selector-one resistor structure in suppressing the leakage current, making it attractive for future high-density flexible crossbar memory array." @default.
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- W2915679269 date "2019-03-01" @default.
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- W2915679269 title "One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications" @default.
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- W2915679269 doi "https://doi.org/10.1109/ted.2019.2895416" @default.
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