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• W2916401436 endingPage "Q3078" @default.
• W2916401436 startingPage "Q3064" @default.
• W2916401436 abstract "Ga2O3 has been a subject of interest in research field with varying applications for current and future generation electronic devices. Due to its ultra-wide bandgap of 4.5–5.0 eV, extremely high BFOM of 3444, and other prominent characteristics relating to material properties, easy to mass-produce and economical, β-Ga2O3 finds applications in variety of electronics devices, power devices and optoelectronics devices. A comprehensive review of RF sputtered β-Ga2O3 films along with its properties, studies and applications are presented in this paper for the first time. Polymorphs of gallium oxide and crystal structure are discussed. Structural and chemical composition studies are reviewed with XRD and XPS. This review summarizes the recent progress in effects of sputtering parameters on film properties of Ga2O3. This review provides an in-depth analysis of mechanical, optical, film morphology, electrical properties of RF sputtered β-Ga2O3 films. The role of sputtering parameters such as substrate temperature, sputtering power, annealing temperatures and oxygen composition in the reactive sputtering for crystallinity are discussed. Furthermore, doping elements effects on bandgap changes are reported." @default.
• W2916401436 created "2019-03-02" @default.
• W2916401436 creator A5049027350 @default.
• W2916401436 creator A5078138605 @default.
• W2916401436 creator A5081289097 @default.
• W2916401436 date "2019-01-01" @default.
• W2916401436 modified "2023-10-16" @default.
• W2916401436 title "Review—RF Sputtered Films of Ga₂O₃" @default.
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