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• W2916684503 abstract "Behaviors such as expansion and contraction of single Shockley stacking faults (1SSFs) in a 4H-SiC epitaxial layer under various ultraviolet (UV) irradiation conditions were systematically investigated. We demonstrate that the area of the 1SSF has a key role in its behavior during UV light exposure. Contraction immediately progresses after a relatively weak UV irradiation at a high-temperature. The contraction velocity gradually decreases and eventually becomes zero at a certain area, which is dependent on the UV irradiation." @default.
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• W2916684503 date "2019-03-19" @default.
• W2916684503 modified "2023-09-25" @default.
• W2916684503 title "Expansion and contraction of single Shockley stacking faults in SiC epitaxial layer under ultraviolet irradiation" @default.
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• W2916684503 doi "https://doi.org/10.7567/1882-0786/ab0a8f" @default.
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