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• W2917481463 abstract "Abstract We report on the growth of fully relaxed and smooth GaSb layers with reduced density of threading dislocations, deposited on GaAs substrate. We prove that three parameters have to be controlled in order to obtain applicable GaSb buffers with atomically smooth surface: interfacial misfit (IMF), the etch pit density (EPD) and the growth mode. The GaSb/GaAs interfacial misfit array and reduced EPD ≤1.0 × 107 cm−2 were easily obtained using As-flux reduction for 3 min and Sb-soaking surface for 10 s before the GaSb growth initiation. The successive growth of GaSb layer proceeded under the technological conditions described by the wide range of the following parameters: rG ∈ (1.5 ÷ 1.9) A/s, TG ∈ (400 ÷ 520)°C, V/III ∈ (2.3 ÷ 3.5). Unfortunately, a spiral or 3D growth modes were observed for this material resulting in the surface roughness of 1.1 ÷ 3.0 nm. Two-dimensional growth mode (layer by layer) can only be achieved under the strictly defined conditions. In our case, the best quality 1-μm-thick GaSb buffer layer with atomically smooth surface was obtained for the following set of parameters: rG = 1.5 A/s, TG = 530 °C, V/III = 2.9. The layer was characterized by the strain relaxation over 99.6%, 90° dislocations array with the average distance of 5.56 nm, EPD ∼8.0 × 106 cm−2 and 2D undulated terraces on the surface with roughness of about 1 ML. No mounds were observed. We belive that only thin and smooth GaSb layer with reduced EPD may be applied as the buffer layer in complex device heterostructures. Otherwise, it may cause the device parameters deterioration." @default.
• W2917481463 created "2019-03-02" @default.
• W2917481463 creator A5011114198 @default.
• W2917481463 creator A5014493957 @default.
• W2917481463 creator A5026463585 @default.
• W2917481463 creator A5054617953 @default.
• W2917481463 creator A5067424586 @default.
• W2917481463 creator A5068817156 @default.
• W2917481463 date "2019-04-01" @default.
• W2917481463 modified "2023-09-24" @default.
• W2917481463 title "GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy" @default.
• W2917481463 cites W1963596367 @default.
• W2917481463 cites W1965571863 @default.
• W2917481463 cites W1973997031 @default.
• W2917481463 cites W1974771665 @default.
• W2917481463 cites W1995102838 @default.
• W2917481463 cites W1996536418 @default.
• W2917481463 cites W1997694685 @default.
• W2917481463 cites W2006501562 @default.
• W2917481463 cites W2007786998 @default.
• W2917481463 cites W2015800146 @default.
• W2917481463 cites W2016698503 @default.
• W2917481463 cites W2019414628 @default.
• W2917481463 cites W2024328911 @default.
• W2917481463 cites W2044042920 @default.
• W2917481463 cites W2046123334 @default.
• W2917481463 cites W2047404464 @default.
• W2917481463 cites W2049863588 @default.
• W2917481463 cites W2054727646 @default.
• W2917481463 cites W2054735442 @default.
• W2917481463 cites W2064050938 @default.
• W2917481463 cites W2088989106 @default.
• W2917481463 cites W2128754603 @default.
• W2917481463 cites W2161432495 @default.
• W2917481463 cites W2769559051 @default.
• W2917481463 cites W2810075400 @default.
• W2917481463 doi "https://doi.org/10.1016/j.cap.2019.02.012" @default.
• W2917481463 hasPublicationYear "2019" @default.
• W2917481463 type Work @default.
• W2917481463 sameAs 2917481463 @default.
• W2917481463 citedByCount "2" @default.
• W2917481463 countsByYear W29174814632019 @default.
• W2917481463 countsByYear W29174814632021 @default.
• W2917481463 crossrefType "journal-article" @default.
• W2917481463 hasAuthorship W2917481463A5011114198 @default.
• W2917481463 hasAuthorship W2917481463A5014493957 @default.
• W2917481463 hasAuthorship W2917481463A5026463585 @default.
• W2917481463 hasAuthorship W2917481463A5054617953 @default.
• W2917481463 hasAuthorship W2917481463A5067424586 @default.
• W2917481463 hasAuthorship W2917481463A5068817156 @default.
• W2917481463 hasConcept C107365816 @default.
• W2917481463 hasConcept C110738630 @default.
• W2917481463 hasConcept C111368507 @default.
• W2917481463 hasConcept C127313418 @default.
• W2917481463 hasConcept C159985019 @default.
• W2917481463 hasConcept C171250308 @default.
• W2917481463 hasConcept C185592680 @default.
• W2917481463 hasConcept C192562407 @default.
• W2917481463 hasConcept C2777289219 @default.
• W2917481463 hasConcept C2779227376 @default.
• W2917481463 hasConcept C3792809 @default.
• W2917481463 hasConcept C49040817 @default.
• W2917481463 hasConcept C71039073 @default.
• W2917481463 hasConcept C8010536 @default.
• W2917481463 hasConceptScore W2917481463C107365816 @default.
• W2917481463 hasConceptScore W2917481463C110738630 @default.
• W2917481463 hasConceptScore W2917481463C111368507 @default.
• W2917481463 hasConceptScore W2917481463C127313418 @default.
• W2917481463 hasConceptScore W2917481463C159985019 @default.
• W2917481463 hasConceptScore W2917481463C171250308 @default.
• W2917481463 hasConceptScore W2917481463C185592680 @default.
• W2917481463 hasConceptScore W2917481463C192562407 @default.
• W2917481463 hasConceptScore W2917481463C2777289219 @default.
• W2917481463 hasConceptScore W2917481463C2779227376 @default.
• W2917481463 hasConceptScore W2917481463C3792809 @default.
• W2917481463 hasConceptScore W2917481463C49040817 @default.
• W2917481463 hasConceptScore W2917481463C71039073 @default.
• W2917481463 hasConceptScore W2917481463C8010536 @default.
• W2917481463 hasFunder F4320322511 @default.
• W2917481463 hasFunder F4320335039 @default.
• W2917481463 hasLocation W29174814631 @default.
• W2917481463 hasOpenAccess W2917481463 @default.
• W2917481463 hasPrimaryLocation W29174814631 @default.
• W2917481463 hasRelatedWork W173654701 @default.
• W2917481463 hasRelatedWork W1972019597 @default.
• W2917481463 hasRelatedWork W197472492 @default.
• W2917481463 hasRelatedWork W1980948173 @default.
• W2917481463 hasRelatedWork W1988936070 @default.
• W2917481463 hasRelatedWork W1994458482 @default.
• W2917481463 hasRelatedWork W2000264004 @default.
• W2917481463 hasRelatedWork W2005999129 @default.
• W2917481463 hasRelatedWork W2031805013 @default.
• W2917481463 hasRelatedWork W2060324273 @default.
• W2917481463 hasRelatedWork W2081767625 @default.
• W2917481463 hasRelatedWork W2095004238 @default.
• W2917481463 hasRelatedWork W2095547305 @default.
• W2917481463 hasRelatedWork W2144261965 @default.
• W2917481463 hasRelatedWork W2314383911 @default.
• W2917481463 hasRelatedWork W2319780273 @default.
• W2917481463 hasRelatedWork W2511632869 @default.

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