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• W2917829103 abstract "A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion implanted source regions in a Mg ion implanted p-type base with N ion implanted termination regions. A maximum drain current of 115 mA/mm, maximum transconductance of 19 mS/mm at a drain voltage of 15 V, and a threshold voltage of 3.6 V were obtained for the fabricated DMOSFET with a gate length of 0.4 μm with an estimated p-type base Mg surface concentration of 5 × 1018 cm−3. The difference between calculated and measured Vths could be due to the activation ratio of ion-implanted Mg as well as Fermi level pinning and the interface state density. On-resistance of 9.3 mΩ·cm2 estimated from the linear region was also attained. Blocking voltage at off-state was 213 V. The fully ion implanted GaN DMOSFET is a promising candidate for future high-voltage and high-power applications." @default.
• W2917829103 created "2019-03-02" @default.
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• W2917829103 date "2019-02-26" @default.
• W2917829103 modified "2023-09-25" @default.
• W2917829103 title "Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics" @default.
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• W2917829103 doi "https://doi.org/10.3390/ma12050689" @default.
• W2917829103 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/6427114" @default.
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