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- W2918454894 abstract "Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 10<sup>16</sup> cm<sup>-3</sup> range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga<sub>2</sub>O<sub>3</sub> vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm<sup>2</sup> ) Ga<sub>2</sub>O<sub>3 </sub>rectifiers were fabricated on a Si-doped n-Ga<sub>2</sub>O<sub>3</sub> drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga<sub>2</sub>O<sub>3</sub> (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga<sub>2</sub>O<sub>3</sub> rectifiers. The on-state resistance was 0.26 Ω·cm<sup>2 </sup> for these largest diodes, decreasing to 5.9 × 10<sup>-4</sup> Ω·cm<sup>2</sup> for 40x40 μm<sup>2</sup> devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10<sup>-3</sup> cm<sup>2</sup> area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga<sub>2</sub>O<sub>3</sub> drift layers. These devices were switched from 0.225 A to -700 V with t<sub>rr</sub> of 82 ns, and from 1 A to -300 V with t<sub>rr</sub> of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of t<sub>rr</sub> up to 150°C." @default.
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- W2918454894 date "2019-03-01" @default.
- W2918454894 modified "2023-09-26" @default.
- W2918454894 title "DC and dynamic switching characteristics of field-plated vertical geometry [beta]-Ga2O3 rectifiers" @default.
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- W2918454894 doi "https://doi.org/10.1117/12.2515006" @default.
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