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• W2919848789 abstract "Digital electronics in SiC find use in high-temperature applications. The objective of this study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a recessed channel CMOS process. Selective doping is achieved by etching epitaxial layers into mesas. A deposited SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -film, post-annealed at low temperature and re-oxidized in pyrogenic steam, is used as the gate oxide to produce a conformal gate oxide over the non-planar topography. PMOS, NMOS, inverters, and ring oscillators are characterized at 200°C. The PMOS requires reduced threshold voltage in order to enable long-term reliability. This result demonstrates that it is possible to fabricate SiC CMOS without ion implantation and by low-temperature processing." @default.
• W2919848789 created "2019-03-11" @default.
• W2919848789 creator A5017072976 @default.
• W2919848789 creator A5058433938 @default.
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• W2919848789 date "2019-05-01" @default.
• W2919848789 modified "2023-10-03" @default.
• W2919848789 title "High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators" @default.
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• W2919848789 doi "https://doi.org/10.1109/led.2019.2903184" @default.
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