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- W2920452938 abstract "Real-time plasma controller for SF 6 /O 2 /Ar etching process plasma was developed to reduce first wafer effect caused by cleaning of plasma facing components. After the cleaning of the reactor, the etch rate of silicon decreased 12 % from the etch rate of normal state and increased with repeating etching processes. To reduce the first wafer effect, real-time feedback controller for fluorine density was developed. The controller adjusted O 2 gas flow rate to keep monitored fluorine density constant. With the controller, the etch rate of silicon after the cleaning was kept within 1 % variation." @default.
- W2920452938 created "2019-03-11" @default.
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- W2920452938 date "2018-12-01" @default.
- W2920452938 modified "2023-10-18" @default.
- W2920452938 title "Real-time Etch Control to Reduce First Wafer Effect in SF<inf>6</inf>/O<inf>2</inf>/Ar Plasma" @default.
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- W2920452938 doi "https://doi.org/10.1109/issm.2018.8651157" @default.
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