Matches in SemOpenAlex for { <https://semopenalex.org/work/W2920797783> ?p ?o ?g. }
- W2920797783 abstract "Abstract Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe 2 ) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO 2 /Si, quartz, sapphire, silicon or SiO 2 /Si with three-dimensional patterns at 300 °C. Owing to the atomically-clean van-der-Walls conformal interface and the fact that 2D-BN can better bridge the vibrational spectrum across the interface and protect interfacial heat conduction against substrate roughness, both improved performance and thermal dissipation of WSe 2 field-effect transistor are realized with mobility around 56~ 121 cm 2 V −1 s −1 and saturated power intensity up to 4.23 × 10 3 W cm −2 . Owing to its simplicity, conformal growth on three-dimensional surface, compatibility with microelectronic process, it has potential for application in future two-dimensional electronics." @default.
- W2920797783 created "2019-03-22" @default.
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- W2920797783 date "2019-03-13" @default.
- W2920797783 modified "2023-10-06" @default.
- W2920797783 title "Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation" @default.
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- W2920797783 doi "https://doi.org/10.1038/s41467-019-09016-0" @default.
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