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• W2921167563 abstract "The impact of various postdeposition annealing (PDA) ambiences (N2, O2, and NH3) on the hole mobility of germanium (Ge) pMOSFET with GeO2/Al2O3 gate-stack is investigated. It is found that the mobility is about 10% higher after N2 PDA, while it is about 10% smaller after O2 and NH3 PDA than that without PDA. The physical origin is attributed to the remote Coulomb scattering. The Ge/GeO2 interface charge Q1 decreases, but the GeO2/Al2O3 interface dipole Qdipole increases after PDA in N2, O2, and NH3. The higher mobility after N2 PDA is due to a smaller Q1 and Qdipole, while the lower mobility after O2 and NH3 PDA is due to a larger Qdipole. All these three PDA ambiences are beneficial to reduce the gate leakage current. Therefore, PDA in N2 is a balance approach for both the hole mobility improvement and gate leakage current reduction." @default.
• W2921167563 created "2019-03-22" @default.
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• W2921167563 date "2019-04-01" @default.
• W2921167563 modified "2023-10-18" @default.
• W2921167563 title "Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences" @default.
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• W2921167563 doi "https://doi.org/10.1109/ted.2019.2900801" @default.
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