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• W2921562318 abstract "The Ag and In co-doped PbTe, AgnPb100InnTe100+2n (LIST), exhibits n-type behavior and features unique inherent electronic levels that induce self-tuning carrier density. Results show that In is amphoteric in the LIST, forming both In3+ and In1+ centers. Through unique interplay of valence fluctuations in the In centers and conduction band filling, the electron carrier density can be increased from ≈3.1 × 1018 cm−3 at 323 K to ≈2.4 × 1019 cm−3 at 820 K, leading to large power factors peaking at ≈16.0 µWcm−1 K−2 at 873 K. The lone pair of electrons from In+ can be thermally continuously promoted into the conduction band forming In3+, consistent with the amphoteric character of In. Moreover, with rising temperature, the Fermi level shifts into the conduction band, which enlarges the optical band gap based on the Moss–Burstein effect, and reduces bipolar diffusion and thermal conductivity. Adding extra Ag in LIST improves the electrical transport properties and meanwhile lowers the lattice thermal conductivity to ≈0.40 Wm−1 K−1. The addition of Ag creates spindle-shaped Ag2Te nanoprecipitates and atomic-scale interstitials that scatter a broader set of phonons. As a result, a maximum ZT value ≈1.5 at 873 K is achieved in Ag6Pb100InTe102 (LIST)." @default.
• W2921562318 created "2019-03-22" @default.
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• W2921562318 date "2019-03-07" @default.
• W2921562318 modified "2023-10-17" @default.
• W2921562318 title "Amphoteric Indium Enables Carrier Engineering to Enhance the Power Factor and Thermoelectric Performance in <i>n</i> ‐Type Ag <i> _n </i> Pb ₁₀₀ In <i> _n </i> Te ₁₀₀₊₂ <i> _n </i> (LIST)" @default.
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• W2921562318 doi "https://doi.org/10.1002/aenm.201900414" @default.
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