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- W2921693629 abstract "Abstract Hexagonal boron nitride (h-BN) has been predicted to exhibit an in-plane thermal conductivity as high as ~ 550 W m −1 K −1 at room temperature, making it a promising thermal management material. However, current experimental results (220–420 W m −1 K −1 ) have been well below the prediction. Here, we report on the modulation of h-BN thermal conductivity by controlling the B isotope concentration. For monoisotopic 10 B h-BN, an in-plane thermal conductivity as high as 585 W m −1 K −1 is measured at room temperature, ~ 80% higher than that of h-BN with a disordered isotope concentration (52%:48% mixture of 10 B and 11 B). The temperature-dependent thermal conductivities of monoisotopic h-BN agree well with first principles calculations including only intrinsic phonon-phonon scattering. Our results illustrate the potential to achieve high thermal conductivity in h-BN and control its thermal conductivity, opening avenues for the wide application of h-BN as a next-generation thin-film material for thermal management, metamaterials and metadevices." @default.
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- W2921693629 date "2019-05-02" @default.
- W2921693629 modified "2023-10-17" @default.
- W2921693629 title "Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration" @default.
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- W2921693629 doi "https://doi.org/10.1038/s42005-019-0145-5" @default.
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