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- W2922605287 abstract "SnO is an ideally suitable p-type conductive material, with large hole mobility, and has attracted great interest in connection with next-generation electronic applications. In the present work, tin oxide (SnOx) thin films were deposited on unheated soda lime glass substrates by reactive DC sputtering from a pure Sn target. The structural, optical and electrical properties of the films were analysed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air. A structural analysis was carried out using Raman spectroscopy and X-ray diffraction. Optical and electrical characterizations were performed using photo-spectrometry and Hall effect measurements, respectively. The films grown at room temperature and low oxygen pressures reached high deposition rates of above 45 nm/min, showing poorly crystalline SnO and low transparency. Subsequent heating to 350 °C allowed to achieve a more crystalline tetragonal SnO with an average visible transmittance of 65%, a p-type conductivity of 0.8 S/cm, and a hole mobility of 3.5 cm2/(V s)." @default.
- W2922605287 created "2019-04-01" @default.
- W2922605287 creator A5039723657 @default.
- W2922605287 creator A5058161295 @default.
- W2922605287 date "2019-08-01" @default.
- W2922605287 modified "2023-10-13" @default.
- W2922605287 title "P-type SnO thin films prepared by reactive sputtering at high deposition rates" @default.
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- W2922605287 doi "https://doi.org/10.1016/j.jmst.2019.03.034" @default.
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