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• W2925512888 abstract "This paper presents the Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> O (x = 0, 0.1, and 0.3)-based photodetectors (PDs) by using mist atmospheric pressure chemical vapor deposition. X-ray diffraction and X-ray photoelectron spectroscopy are used to characterize crystal orientation, chemical qualitative, and quantitative characteristics of the Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> (x = 0, 0.1, and 0.3) thin films. The photoluminescence is used to observe the near-band-edge emission and trap energy level. Among these three PDs, the Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.3</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.7</sub> O-based PD shows the lowest dark current, smallest noise current, and shortest response time. Furthermore, the Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.3</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.7</sub> O-based PD exhibits higher UV-B to UV-A rejection ratio and higher UV-B to visible rejection ratio. It is found that the cutoff wavelength is tunable by changing Ga contents in Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Zn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> thin films." @default.
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• W2925512888 date "2019-05-01" @default.
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• W2925512888 title "Investigation of Bandgap Engineering of Gallium Zinc Oxide-Based Ultraviolet Photodetector by Mist Atmospheric Pressure Chemical Vapor Deposition" @default.
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• W2925512888 doi "https://doi.org/10.1109/ted.2019.2904986" @default.
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