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• W2927133044 abstract "In this letter, we demonstrate an integrated negative capacitance oxide thin-film transistor (NC-OTFT) based on ferroelectric Hf <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> Zr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> (HfZrO) film. The buried-gated TiN/HfZrO/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> structure is developed with indium zinc oxide as its channel. The transfer characteristics are measured with 1.2-V supply voltage. The NC-OTFT 15-nm HfZrO/6-nm Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> shows <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$2.5times 10^{textsf {7}}$ </tex-math></inline-formula> ON/OFF current ratio and 120-mV anticlockwise hysteresis. The subthreshold swing (SS) values of this NC-OTFT are lower than those of the control devices without HfZrO. The reverse SS shows sub-60 mV/decade about 2 orders of drain current. The minimal reverse and forward SS values are 52.8 and 74.1 mV/decade, respectively. The NC-OTFT with 8-nm HfZrO/6-nm Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> is inspected with considerably narrower hysteresis of 50 mV. Its reverse and forward SS values reach as low as 63.6 and 69.8 mV/decade, respectively. The NC effect is observed in the gate-stack capacitance of the NC-OTFTs. This NC-OTFT is promising for low operating voltage and low power consumption applications." @default.
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• W2927133044 date "2019-05-01" @default.
• W2927133044 modified "2023-10-18" @default.
• W2927133044 title "Negative Capacitance Oxide Thin-Film Transistor With Sub-60 mV/Decade Subthreshold Swing" @default.
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• W2927133044 doi "https://doi.org/10.1109/led.2019.2907988" @default.
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