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• W2928073233 abstract "This paper presents an analytic model to calculate nodal charges and their corresponding internodal capacitances in ultra-scaled III-nitride high electron mobility transistors (HEMTs) in which carrier transport is expected to be quasiballistic. The dynamic model is combined with our previously published static model [K. Li and S. Rakheja, J. Appl. Phys. 123, 184501 (2018)] to provide a unified physical description of the HEMT. In the dynamic model, the position-dependent channel charge is obtained using a realistic potential profile in the channel, obtained from the solution of the Poisson equation. The effect of electric field lines penetrating from the ungated access regions into the channel (gated region) is included. Fringing electric field lines from the gate to the channel, which are especially critical in the off-region of the device, are included in the charge description. The channel charges are obtained self-consistently with the transport model and introduce 16 additional input parameters, which are necessary to explain the bias dependence of internodal capacitances in the off-state and in the off-to-on transition region of the device. Using the model, we elucidate the difference in the capacitance-voltage behavior of drift-diffusive and quasiballistic devices. The sensitivity of channel charges to the specific formulation of the potential profile is also examined. The unified model is applied to the experimental capacitance-voltage data of 42-nm and 105-nm gate-length InAlN/GaN HEMTs with an InGaN backbarrier. Additionally, the model is validated against hydrodynamic simulations of a 50-nm gate-length AlGaN/GaN HEMT with significant Joule heating. The model yields an excellent agreement with the measured and simulated data sets over a broad range of bias and temperature conditions. The model is also used to elucidate the role of contact resistance, Joule heating, and nodal capacitances on the RF performance, i.e., cut-off frequency, third-order intermodulation current, and the input third-order intercept point, of scaled III-nitride HEMTs." @default.
• W2928073233 created "2019-04-11" @default.
• W2928073233 creator A5008017308 @default.
• W2928073233 creator A5041129182 @default.
• W2928073233 date "2019-04-04" @default.
• W2928073233 modified "2023-09-27" @default.
• W2928073233 title "A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors" @default.
• W2928073233 cites W1512089265 @default.
• W2928073233 cites W1946655857 @default.
• W2928073233 cites W1965817159 @default.
• W2928073233 cites W1968317225 @default.
• W2928073233 cites W1977347956 @default.
• W2928073233 cites W2003810056 @default.
• W2928073233 cites W2004601848 @default.
• W2928073233 cites W2006271366 @default.
• W2928073233 cites W2015111068 @default.
• W2928073233 cites W2015974818 @default.
• W2928073233 cites W2018680216 @default.
• W2928073233 cites W2025028595 @default.
• W2928073233 cites W2032664993 @default.
• W2928073233 cites W2035334862 @default.
• W2928073233 cites W2035635036 @default.
• W2928073233 cites W2038087740 @default.
• W2928073233 cites W2058717737 @default.
• W2928073233 cites W2059195193 @default.
• W2928073233 cites W2070708217 @default.
• W2928073233 cites W2073487777 @default.
• W2928073233 cites W2075194657 @default.
• W2928073233 cites W2077192505 @default.
• W2928073233 cites W2081118359 @default.
• W2928073233 cites W2095688642 @default.
• W2928073233 cites W2096515792 @default.
• W2928073233 cites W2100043312 @default.
• W2928073233 cites W2102412728 @default.
• W2928073233 cites W2108582116 @default.
• W2928073233 cites W2109617856 @default.
• W2928073233 cites W2114418374 @default.
• W2928073233 cites W2115142907 @default.
• W2928073233 cites W2115506409 @default.
• W2928073233 cites W2117448148 @default.
• W2928073233 cites W2117696652 @default.
• W2928073233 cites W2120100303 @default.
• W2928073233 cites W2127236848 @default.
• W2928073233 cites W2127412429 @default.
• W2928073233 cites W2132170989 @default.
• W2928073233 cites W2133752224 @default.
• W2928073233 cites W2133800303 @default.
• W2928073233 cites W2134414498 @default.
• W2928073233 cites W2138037819 @default.
• W2928073233 cites W2140945954 @default.
• W2928073233 cites W2141137685 @default.
• W2928073233 cites W2141981815 @default.
• W2928073233 cites W2147297479 @default.
• W2928073233 cites W2159280428 @default.
• W2928073233 cites W2517658922 @default.
• W2928073233 cites W2519692369 @default.
• W2928073233 cites W2781501785 @default.
• W2928073233 cites W2799836218 @default.
• W2928073233 cites W2888466094 @default.
• W2928073233 cites W3217214766 @default.
• W2928073233 doi "https://doi.org/10.1063/1.5064385" @default.
• W2928073233 hasPublicationYear "2019" @default.
• W2928073233 type Work @default.
• W2928073233 sameAs 2928073233 @default.
• W2928073233 citedByCount "4" @default.
• W2928073233 countsByYear W29280732332019 @default.
• W2928073233 countsByYear W29280732332020 @default.
• W2928073233 countsByYear W29280732332021 @default.
• W2928073233 crossrefType "journal-article" @default.
• W2928073233 hasAuthorship W2928073233A5008017308 @default.
• W2928073233 hasAuthorship W2928073233A5041129182 @default.
• W2928073233 hasConcept C106782819 @default.
• W2928073233 hasConcept C121332964 @default.
• W2928073233 hasConcept C147120987 @default.
• W2928073233 hasConcept C162057924 @default.
• W2928073233 hasConcept C165801399 @default.
• W2928073233 hasConcept C171250308 @default.
• W2928073233 hasConcept C172385210 @default.
• W2928073233 hasConcept C17525397 @default.
• W2928073233 hasConcept C189278905 @default.
• W2928073233 hasConcept C192562407 @default.
• W2928073233 hasConcept C26873012 @default.
• W2928073233 hasConcept C2778871202 @default.
• W2928073233 hasConcept C2779227376 @default.
• W2928073233 hasConcept C30066665 @default.
• W2928073233 hasConcept C49040817 @default.
• W2928073233 hasConcept C60799052 @default.
• W2928073233 hasConcept C62520636 @default.
• W2928073233 hasConcept C96716743 @default.
• W2928073233 hasConceptScore W2928073233C106782819 @default.
• W2928073233 hasConceptScore W2928073233C121332964 @default.
• W2928073233 hasConceptScore W2928073233C147120987 @default.
• W2928073233 hasConceptScore W2928073233C162057924 @default.
• W2928073233 hasConceptScore W2928073233C165801399 @default.
• W2928073233 hasConceptScore W2928073233C171250308 @default.
• W2928073233 hasConceptScore W2928073233C172385210 @default.
• W2928073233 hasConceptScore W2928073233C17525397 @default.
• W2928073233 hasConceptScore W2928073233C189278905 @default.
• W2928073233 hasConceptScore W2928073233C192562407 @default.
• W2928073233 hasConceptScore W2928073233C26873012 @default.

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