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• W2931638260 abstract "AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation. Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.85</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.15</sub> N/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.7</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.3</sub> N (85/70) HEMTs were operated up to 500 °C in ambient causing only 58% reduction of dc current relative to 25 °C measurement. The low gate leakage current contributed to high gate voltage operation up to +10 V under V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ds</sub> = 10 V, with I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> ratios of > 2 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> and 3 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> at 25 and 500 °C, respectively. Gate-lag measurements at 100 kHz and 10% duty cycle were ideal and only slight loss of pulsed current at high gate voltages was observed. Low interfacial defects give rise to high quality pulsed characteristics and a low subthreshold swing value of 80 mV/dec at room temperature. Herein is an analysis of AlGaN-channel HEMTs and their potential future for high power and high temperature applications." @default.
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• W2931638260 date "2019-01-01" @default.
• W2931638260 modified "2023-09-30" @default.
• W2931638260 title "Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors" @default.
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• W2931638260 doi "https://doi.org/10.1109/jeds.2019.2907306" @default.
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