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- W2932252318 abstract "In this paper, a super-junction p-type lateral diffused metal-oxide-semiconductor transistor (SJ-pLDMOS) utilizing electron to enhance the current capability is proposed. The proposed SJ-pLDMOS has an n-channel in the drain region and is controlled by an auto-generated voltage signal (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Gn</sub> ). The voltage signal V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Gn</sub> is generated during the ONand OFF-state of the hole current which flows across an integrated resistor (Rp) implemented in the p-base region. Thus, the proposed SJ-pLDMOS utilizes both hole and electron currents to significantly enhance the current capability. Simulation results show that the current capability of the proposed SJ-pLDMOS without any conductivity modulation effect is comparable with that of a super-junction nLDMOS (SJ-nLDMOS). The total power loss of the proposed super-junction pLDMOS (SJ-pLDMOS) is reduced by about 26.7% and 18% compared with that of the SJ-nLDMOS and Triple Resurf nLDMOS (TR nLDMOS) at a rated load current density of 25 μA/μm, respectively." @default.
- W2932252318 created "2019-04-11" @default.
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- W2932252318 date "2019-05-01" @default.
- W2932252318 modified "2023-10-18" @default.
- W2932252318 title "A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability" @default.
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- W2932252318 doi "https://doi.org/10.1109/ted.2019.2905964" @default.
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