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• W2936182368 endingPage "1900125" @default.
• W2936182368 startingPage "1900125" @default.
• W2936182368 abstract "Here, the bilayer InGaZnO/In2O3 thin-film transistors (TFTs) are deposited by radio-frequency magnetron sputtering at room temperature. A high field-effect mobility (μFE) of 64.4 cm2 V−1 s−1 and a small subthreshold swing (SS) of 204 mV per decade are achieved in the bilayer-stack TFTs fabricated upon SiO2/Si substrate, with large improvement compared to the single-layer InGaZnO and In2O3 TFTs. Implementing HfO2 and Si3N4 as high-k gate dielectrics, μFE and SS are correspondingly enhanced to be 67.5 and 79.1 cm2 V−1 s−1, and 85 and 92 mV per decade in the bilayer TFTs. Defect self-compensation effect is also revealed, i.e., (In)+ + (O)− → In − O, while, respectively, considering the indium- and oxygen-related defects in InGaZnO and In2O3 and exploring the numerical simulations in SILVACO/Atlas (for electrical performance) and Quantum Espresso (for physical analysis). The InO formation can result in a significant reduction in defect density (validated by the X-ray photoelectron spectra and low-frequency noise characterizations) and therefore improvement of μFE and SS in the bilayer-stack TFT. The important role of defect self-compensation mechanism while combining different individual channel layers in the oxide semiconducting TFTs is underlined and highly potential application in next-generation, fast-speed flexible displays is shown." @default.
• W2936182368 created "2019-04-25" @default.
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• W2936182368 date "2019-04-18" @default.
• W2936182368 modified "2023-10-17" @default.
• W2936182368 title "Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In ₂ O ₃ Thin‐Film Transistor" @default.
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• W2936182368 doi "https://doi.org/10.1002/aelm.201900125" @default.
• W2936182368 hasPublicationYear "2019" @default.
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