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• W2938172878 abstract "Polar and electromechanical properties of ferroelectric thin films including polarization domain formation and switching under the influence of flexoelectric effect, surface charges, and chemical strains have been studied using the phenomenological Landau-Ginzburg-Devonshire theory. The effects are inherent to a thin single-crystalline ferroelectric film containing lattice defects and were studied both separately and in competition with one another to determine their exclusive impacts as well as their interplay in the investigated system.Ferroelectric films of barium titanate, lead titanate, and lead zirconate-titanate are best characterized, having the predictable behaviour at domain formation and polarization switching and possess the fullest set of measured parametric coefficients to use in phenomenological model in this thesis. Their behaviour is modelled with the inclusion of flexoelectricity, an electromechanical effect connecting polar properties with strain gradient, charges at the film surface, formed from surface states or a non-ideal electrode, and chemical strains resulting from inclusion of defects into the crystal lattice.The first chapter gives an overview of ferroelectric research, applications, and challenges, as well as explains the origin and working principles of the effects of interest. Ferroelectrics are intensively studied materials that are invisibly omnipresent in modern electronic technology. Their phenomenological study is set to move forward the understanding of processes taking place in these substances. Previous experimental and theoretical works support the statement that the effects of interest indeed have influence upon solid-state substances, and particularly upon ferroelectrics. This study helps to understand how these effects can be represented in phenomenological models and most importantly, how they interact with each other.The second chapter describes the theoretical background of this study. It is shown how properties of ferroelectrics are expressed through thermodynamic potentials and incorporated into the framework of the Landau-Ginzburg-Devonshire theory. All relevant effects taking place in the ferroelectric film are incorporated into the theoretical model, including ferroelastic properties and semiconductor properties, expressed via electromechanical and electrostatic terms, respectively. Among these properties, the effects of interest are introduced and underlined. A part of the chapter explains the basic principle of the finite-element method used in the modelling software to perform calculations with given precision.The third chapter is dedicated to the specific problems studied in this thesis. The sections of the chapter follow this division, focusing first on the flexoelectric impact on the static and dynamic characteristics of the samples, then the surface charges influence on domain formation and switching dynamics, and finally the defect-driven chemical strains impacting domain properties of the ferroelectric in a competition with the two other mechanisms. The specific problems are first stated being followed by the publications where the investigations were made.The fourth chapter discusses the results and makes conclusions on the contributions of each considered effect into the domain formation process and parameters and/or ferroelectric switching dynamics. The tunability of parameters and the prospects of usage and processing of ferroelectric films are discussed.The final chapter gives an overview of the related scientific problems that may be addressed using methods or results described in the current work." @default.
• W2938172878 created "2019-04-25" @default.
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• W2938172878 date "2019-04-04" @default.
• W2938172878 modified "2023-09-27" @default.
• W2938172878 title "Domain formation and switching kinetics in thin ferroelectric films conditioned by flexoelectricity, surface screening and chemical strains" @default.
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