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• W2938421330 endingPage "031304" @default.
• W2938421330 startingPage "031304" @default.
• W2938421330 abstract "Plasma etching of high aspect ratio (HAR) features, typically vias, is a critical step in the fabrication of high capacity memory. With aspect ratios (ARs) exceeding 50 (and approaching 100), maintaining critical dimensions (CDs) while eliminating or diminishing twisting, contact-edge-roughening, and aspect ratio dependent etching (ARDE) becomes challenging. Integrated reactor and feature scale modeling was used to investigate the etching of HAR features in SiO2 with ARs up to 80 using tri-frequency capacitively coupled plasmas sustained in Ar/C4F8/O2 mixtures. In these systems, the fluxes of neutral radicals to the wafer exceed the fluxes of ions by 1–2 orders of magnitude due to lower threshold energies for dissociation compared with ionization. At low ARs (<5), these abundant fluxes of CFx and CxFy radicals to the etch front passivate the oxide to form a complex which is then removed by energetic species (ions and hot neutrals) through chemically enhanced reactive etching, resulting in the formation of gas phase SiFx, COx, and COF. As the etching proceeds into higher ARs, the fractional contribution of physical sputtering to oxide removal increases as the fluxes of energetic species to the etch front surpass those of the conduction constrained CFx and CxFy radicals. The instantaneous etch rate of oxide decreases with increasing aspect ratio (ARDE effect) due to decreased fluxes of energetic species and decreased power delivered by these species to the etch front. As the etch rate of photoresist (PR) is independent of AR, maintaining CDs by avoiding undercut and bowing requires high SiO2-over-PR selectivity, which in turn requires a minimum thickness of the PR at the end of etching. Positive ions with narrow angular distributions typically deposit charge on the bottom of low AR features, producing a maximum in positive electric potential on the bottom of the feature. For high AR features, grazing incidence collisions of ions on sidewalls depositing charge produce electric potentials with maxima on the sidewalls (as opposed to the bottom) of the feature.Plasma etching of high aspect ratio (HAR) features, typically vias, is a critical step in the fabrication of high capacity memory. With aspect ratios (ARs) exceeding 50 (and approaching 100), maintaining critical dimensions (CDs) while eliminating or diminishing twisting, contact-edge-roughening, and aspect ratio dependent etching (ARDE) becomes challenging. Integrated reactor and feature scale modeling was used to investigate the etching of HAR features in SiO2 with ARs up to 80 using tri-frequency capacitively coupled plasmas sustained in Ar/C4F8/O2 mixtures. In these systems, the fluxes of neutral radicals to the wafer exceed the fluxes of ions by 1–2 orders of magnitude due to lower threshold energies for dissociation compared with ionization. At low ARs (<5), these abundant fluxes of CFx and CxFy radicals to the etch front passivate the oxide to form a complex which is then removed by energetic species (ions and hot neutrals) through chemically enhanced reactive etching, resulting in the formation of..." @default.
• W2938421330 created "2019-04-25" @default.
• W2938421330 creator A5009306289 @default.
• W2938421330 creator A5016792431 @default.
• W2938421330 creator A5022806524 @default.
• W2938421330 creator A5044736604 @default.
• W2938421330 creator A5056271854 @default.
• W2938421330 creator A5085654170 @default.
• W2938421330 creator A5091137465 @default.
• W2938421330 date "2019-05-01" @default.
• W2938421330 modified "2023-10-03" @default.
• W2938421330 title "Plasma etching of high aspect ratio features in SiO₂ using Ar/C₄F₈/O₂ mixtures: A computational investigation" @default.
• W2938421330 cites W1491729535 @default.
• W2938421330 cites W1925099402 @default.
• W2938421330 cites W1963779958 @default.
• W2938421330 cites W1963829314 @default.
• W2938421330 cites W1964366461 @default.
• W2938421330 cites W1964912697 @default.
• W2938421330 cites W1971991820 @default.
• W2938421330 cites W1973572154 @default.
• W2938421330 cites W1982487226 @default.
• W2938421330 cites W1995281324 @default.
• W2938421330 cites W1997913942 @default.
• W2938421330 cites W1999826237 @default.
• W2938421330 cites W2001820283 @default.
• W2938421330 cites W2004009914 @default.
• W2938421330 cites W2010933602 @default.
• W2938421330 cites W2011741695 @default.
• W2938421330 cites W2014736870 @default.
• W2938421330 cites W2016399002 @default.
• W2938421330 cites W2019579242 @default.
• W2938421330 cites W2021774450 @default.
• W2938421330 cites W2022949630 @default.
• W2938421330 cites W2023717206 @default.
• W2938421330 cites W2027814329 @default.
• W2938421330 cites W2029228066 @default.
• W2938421330 cites W2032002319 @default.
• W2938421330 cites W2033239845 @default.
• W2938421330 cites W2035120818 @default.
• W2938421330 cites W2036373772 @default.
• W2938421330 cites W2048936233 @default.
• W2938421330 cites W2053530425 @default.
• W2938421330 cites W2054860018 @default.
• W2938421330 cites W2061187850 @default.
• W2938421330 cites W2062799632 @default.
• W2938421330 cites W2065532455 @default.
• W2938421330 cites W2077617665 @default.
• W2938421330 cites W2077638523 @default.
• W2938421330 cites W2080144813 @default.
• W2938421330 cites W2081447987 @default.
• W2938421330 cites W2086103836 @default.
• W2938421330 cites W2094652511 @default.
• W2938421330 cites W2095567118 @default.
• W2938421330 cites W2097044588 @default.
• W2938421330 cites W2098997637 @default.
• W2938421330 cites W2109084853 @default.
• W2938421330 cites W2114954775 @default.
• W2938421330 cites W2117463812 @default.
• W2938421330 cites W2328246011 @default.
• W2938421330 cites W2401407028 @default.
• W2938421330 cites W2462770541 @default.
• W2938421330 cites W2562655035 @default.
• W2938421330 cites W2598495889 @default.
• W2938421330 cites W2608159079 @default.
• W2938421330 cites W2745372035 @default.
• W2938421330 cites W2751730637 @default.
• W2938421330 cites W2793840258 @default.
• W2938421330 cites W2794431151 @default.
• W2938421330 cites W2804858686 @default.
• W2938421330 doi "https://doi.org/10.1116/1.5090606" @default.
• W2938421330 hasPublicationYear "2019" @default.
• W2938421330 type Work @default.
• W2938421330 sameAs 2938421330 @default.
• W2938421330 citedByCount "54" @default.
• W2938421330 countsByYear W29384213302020 @default.
• W2938421330 countsByYear W29384213302021 @default.
• W2938421330 countsByYear W29384213302022 @default.
• W2938421330 countsByYear W29384213302023 @default.
• W2938421330 crossrefType "journal-article" @default.
• W2938421330 hasAuthorship W2938421330A5009306289 @default.
• W2938421330 hasAuthorship W2938421330A5016792431 @default.
• W2938421330 hasAuthorship W2938421330A5022806524 @default.
• W2938421330 hasAuthorship W2938421330A5044736604 @default.
• W2938421330 hasAuthorship W2938421330A5056271854 @default.
• W2938421330 hasAuthorship W2938421330A5085654170 @default.
• W2938421330 hasAuthorship W2938421330A5091137465 @default.
• W2938421330 hasConcept C100460472 @default.
• W2938421330 hasConcept C107187091 @default.
• W2938421330 hasConcept C107872376 @default.
• W2938421330 hasConcept C113196181 @default.
• W2938421330 hasConcept C121332964 @default.
• W2938421330 hasConcept C171250308 @default.
• W2938421330 hasConcept C185544564 @default.
• W2938421330 hasConcept C185592680 @default.
• W2938421330 hasConcept C192562407 @default.
• W2938421330 hasConcept C2779227376 @default.
• W2938421330 hasConcept C49040817 @default.
• W2938421330 hasConcept C82558694 @default.

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