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• W2938463350 abstract "High quality Al 0.25 Ga 0.75 N/GaN modulation-doped heterojunction field-effect transistor (MOD-HFET) structures grown on sapphire substrates with high sheet carrier density and mobility products ( n s μ > 10 16 /Vs at room temperature) have been grown by metal organic chemical vapor deposition (MOCVD). The optimized structures were achieved by varying structural parameters, including the AlGaN spacer layer thickness, the Si-doped AlGaN barrier layer thickness, the Si-doping concentration, and the growth pressure. In these structures, the persistent photoconductivity (PPC) effect associated with the two-dimensional electron gas (2DEG) system was invariantly observed. As a consequence, the characteristic parameters of the 2DEG were sensitive to light and the sensitivity was associated with permanent photoinduced increases in the 2DEG carrier mobility ( μ ) and sheet carrier density ( n s ). However, we observed that the magnitude of the PPC and hence the photoinduced instability associated with these heterostructures were a strong function of only one parameter, the product of n s and μ , which is the most important parameter for the HFET device design. For a fixed excitation photon dose, the ratio of the low temperature PPC to the dark conductivity level was observed to decrease from 200% to 3% as the n s μ (300 K) product was increased from 0.048 × 10 16 /Vs to 1.4 × 10 16 /Vs. Based on our studies, we suggest that the magnitude of the low temperature PPC can be used as a sensitive probe for monitoring the electronic quality of the AlGaN/GaN HFET structures." @default.
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• W2938463350 date "2000-01-01" @default.
• W2938463350 modified "2023-09-27" @default.
• W2938463350 title "Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity in AlGaN/GaN Modulation Doped Heterostructures" @default.
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• W2938463350 doi "https://doi.org/10.1557/s1092578300004853" @default.
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