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• W2940563785 abstract "Intentional doping and unintentional impurities in intrinsic semiconductors generate carriers that enable device operations. Fundamental to the electronic activity of dopants and impurities is the introduction of defect states inside the forbidden energy gap of semiconductors having shallow and/or deep characteristics, which fundamentally define the ability to engineer its physical properties and associated device performance. Here we demonstrate that unintentional electron doping by oxygen (${mathrm{O}}_{mathrm{N}}$) impurities and intentional magnesium hole doping ($mathrm{M}{mathrm{g}}_{mathrm{Sc}}$) in scandium nitride (ScN) do not introduce any defect states inside its fundamental bandgap and that the rigid-band electronic structure remains unchanged. Employing a combination of spectroscopic techniques as well as first-principles density functional theory analysis, we show that the ${mathrm{O}}_{mathrm{N}}$ and $mathrm{M}{mathrm{g}}_{mathrm{Sc}}$ defect states in ScN are located inside the bands, which leaves behind the virgin ScN bandgap as well as the valence and conduction band edges that are important for electronic transport. The rigid-band electronic structure of ScN with respect to the electron and hole doping results in high electron and hole concentrations due to the free movement of Fermi level and results in tunable electronic and thermoelectric properties necessary for device applications." @default.
• W2940563785 created "2019-05-03" @default.
• W2940563785 creator A5008907614 @default.
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• W2940563785 date "2019-04-24" @default.
• W2940563785 modified "2023-09-27" @default.
• W2940563785 title "Rigid-band electronic structure of scandium nitride across the <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mi>n</mml:mi></mml:math> -type to <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mi>p</mml:mi></mml:math> -type carrier transition regime" @default.
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• W2940563785 doi "https://doi.org/10.1103/physrevb.99.161117" @default.
• W2940563785 hasPublicationYear "2019" @default.
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