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- W2941649886 abstract "An Al0.75Ga0.25N/Al0.6Ga0.4N heterostructure field effect transistor with graded MBE-regrown contacts is designed, grown, and fabricated on AlN/sapphire substrate. Maximum drain current density (ID,max) of 460 mA mm−1 was obtained on transistors with gate length of 130 nm. The small signal measurement shows current/power gain cutoff frequency (fT/fmax) of 40 GHz/58 GHz, respectively. Parasitic resistance is found to be a significant factor limiting the frequency performance of the devices. The high frequency performance of devices with high Al concentration AlGaN channel demonstrate potential for high power and high frequency applications." @default.
- W2941649886 created "2019-05-03" @default.
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- W2941649886 date "2019-05-20" @default.
- W2941649886 modified "2023-10-18" @default.
- W2941649886 title "Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>0.6</sub>Ga<sub>0.4</sub>N heterojunction field effect transistor with f<sub>T</sub> of 40 GHz" @default.
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- W2941649886 doi "https://doi.org/10.7567/1882-0786/ab1cf9" @default.
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