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- W2942073039 abstract "Abstract Stencil masks are used in fabrication processes such as photolithography for circuit patterning and micro-electromechanical systems devices. A stencil mask has micro- and nano-scale through-hole patterns on a substrate, and the metal or Si through-patterns are chemically etched along electron beam (EB) lithographic patterns on a resist. However, the electron beam lithography (EBL) and chemical etching processes are complex. Therefore, in this study, a simple and high-throughput fabrication process is proposed. In this process, an ultra-violet (UV)-curable positive-type EB resist was prepared, which can be used to prepare a polymer substrate that can be lithographed by an EB. The micro-scale through-hole patterns were created on a resist substrate with a thickness of approximately 5 μm. Cr deposition was demonstrated on an Si wafer using a fabricated stencil mask. The deposited Cr thin film traced the EBL pattern on the wafer through the mask. The usefulness of the method was demonstrated by preparing a polymer stencil mask." @default.
- W2942073039 created "2019-05-03" @default.
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- W2942073039 date "2019-06-01" @default.
- W2942073039 modified "2023-09-27" @default.
- W2942073039 title "Stencil mask using ultra-violet-curable positive-tone electron beam resist" @default.
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- W2942073039 doi "https://doi.org/10.1016/j.mee.2019.04.022" @default.
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