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- W2942101775 abstract "Abstract In this paper, an impact analyses of source and drain contact thickness of both staggered structure bottom gate top contact (BGTC) (bottom gate top contact), and planar structure bottom gate bottom contact (BGBC) (bottom gate bottom contact) of an inorganic thin film transistor (TFT) have been carried out. Simulation Results show a high drain current at both (Vgs=-40 V) and (Vds=-50 V), as well as a high saturation current have been achived for (BGTC) staggered structure compared with that of BGBC planar structure. Also, a thickness rangement from an infinitesimal value to 100 nm has been obtained." @default.
- W2942101775 created "2019-05-03" @default.
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- W2942101775 date "2019-01-01" @default.
- W2942101775 modified "2023-09-24" @default.
- W2942101775 title "Impact of Source and Drain Contact Thickness on the Performance of an Inorganic thin Film Transistors" @default.
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- W2942101775 doi "https://doi.org/10.1016/j.promfg.2019.02.279" @default.
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