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- W2942486122 abstract "With the continued scaling of MOSFET feature size, reducing the SoC power consumption has become one of the main challenges for the semiconductor industry. Lowering the data retention voltage $(mathrm{V}_{mathrm{ret}})$ can significantly improve the SRAM standby power, which has become one of the dominant components of the overall system power consumption. Therefore, an accurate assessment of SRAM $mathrm{V}_{mathrm{ret}}$ is of critical importance to determine the lowest $mathrm{V}_{mathrm{ret}}$ specification for the SRAM array that still meets the overall product yield target. In this work, the data retention voltage distribution of a 22nm 6T SRAM array is studied through variation aware transient SPICE simulation and compared to Si data. The results show that parametric device variability based intrinsic simulation is insufficient to estimate the data retention voltage of SRAM array. The effect of gate oxide short (GOS), an extrinsic gate leakage mechanism, on the $mathrm{V}_{mathrm{ret}}$ distribution of SRAM array is studied, and it indicates that data retention voltage is especially sensitive to gate oxide shorts. It is shown that gate-drain oxide short and pull-down (PD) transistor gate-source oxide short are the most probable extrinsic mechanisms limiting the yield of the 22nm SRAM array. By accounting both intrinsic and extrinsic effects, an excellent agreement to measured $mathrm{V}_{mathrm{ret}}$ distribution is demonstrated. The methodology validated in this work could be applied to other technology nodes as well, to get a better $mathrm{V}_{mathrm{ret}}$ yield estimation." @default.
- W2942486122 created "2019-05-03" @default.
- W2942486122 creator A5024355847 @default.
- W2942486122 creator A5025385012 @default.
- W2942486122 creator A5061517548 @default.
- W2942486122 creator A5077419928 @default.
- W2942486122 creator A5084321583 @default.
- W2942486122 creator A5037457751 @default.
- W2942486122 date "2019-03-01" @default.
- W2942486122 modified "2023-09-26" @default.
- W2942486122 title "Simulation Based Assessment of SRAM Data Retention Voltage" @default.
- W2942486122 cites W1507078467 @default.
- W2942486122 cites W1591261143 @default.
- W2942486122 cites W1978130618 @default.
- W2942486122 cites W2006292752 @default.
- W2942486122 cites W2117648153 @default.
- W2942486122 cites W2123009614 @default.
- W2942486122 cites W2129938207 @default.
- W2942486122 cites W2142718365 @default.
- W2942486122 cites W2143442327 @default.
- W2942486122 cites W2143901474 @default.
- W2942486122 cites W2151043742 @default.
- W2942486122 cites W2154477062 @default.
- W2942486122 cites W2157210245 @default.
- W2942486122 cites W2162613878 @default.
- W2942486122 cites W2167981182 @default.
- W2942486122 cites W2168101540 @default.
- W2942486122 cites W2171922263 @default.
- W2942486122 cites W2172203429 @default.
- W2942486122 cites W2545471485 @default.
- W2942486122 cites W4244758500 @default.
- W2942486122 doi "https://doi.org/10.1109/isqed.2019.8697425" @default.
- W2942486122 hasPublicationYear "2019" @default.
- W2942486122 type Work @default.
- W2942486122 sameAs 2942486122 @default.
- W2942486122 citedByCount "3" @default.
- W2942486122 countsByYear W29424861222020 @default.
- W2942486122 countsByYear W29424861222022 @default.
- W2942486122 crossrefType "proceedings-article" @default.
- W2942486122 hasAuthorship W2942486122A5024355847 @default.
- W2942486122 hasAuthorship W2942486122A5025385012 @default.
- W2942486122 hasAuthorship W2942486122A5037457751 @default.
- W2942486122 hasAuthorship W2942486122A5061517548 @default.
- W2942486122 hasAuthorship W2942486122A5077419928 @default.
- W2942486122 hasAuthorship W2942486122A5084321583 @default.
- W2942486122 hasConcept C119599485 @default.
- W2942486122 hasConcept C127413603 @default.
- W2942486122 hasConcept C165801399 @default.
- W2942486122 hasConcept C200601418 @default.
- W2942486122 hasConcept C2780866740 @default.
- W2942486122 hasConcept C38652104 @default.
- W2942486122 hasConcept C41008148 @default.
- W2942486122 hasConcept C68043766 @default.
- W2942486122 hasConcept C9390403 @default.
- W2942486122 hasConceptScore W2942486122C119599485 @default.
- W2942486122 hasConceptScore W2942486122C127413603 @default.
- W2942486122 hasConceptScore W2942486122C165801399 @default.
- W2942486122 hasConceptScore W2942486122C200601418 @default.
- W2942486122 hasConceptScore W2942486122C2780866740 @default.
- W2942486122 hasConceptScore W2942486122C38652104 @default.
- W2942486122 hasConceptScore W2942486122C41008148 @default.
- W2942486122 hasConceptScore W2942486122C68043766 @default.
- W2942486122 hasConceptScore W2942486122C9390403 @default.
- W2942486122 hasLocation W29424861221 @default.
- W2942486122 hasOpenAccess W2942486122 @default.
- W2942486122 hasPrimaryLocation W29424861221 @default.
- W2942486122 hasRelatedWork W1979375376 @default.
- W2942486122 hasRelatedWork W2009606643 @default.
- W2942486122 hasRelatedWork W2023834321 @default.
- W2942486122 hasRelatedWork W2082176851 @default.
- W2942486122 hasRelatedWork W2097172029 @default.
- W2942486122 hasRelatedWork W2114488894 @default.
- W2942486122 hasRelatedWork W2148301792 @default.
- W2942486122 hasRelatedWork W2587857167 @default.
- W2942486122 hasRelatedWork W2765125965 @default.
- W2942486122 hasRelatedWork W2998989983 @default.
- W2942486122 isParatext "false" @default.
- W2942486122 isRetracted "false" @default.
- W2942486122 magId "2942486122" @default.
- W2942486122 workType "article" @default.