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• W2942617175 abstract "The current study investigates the fabrication of semiconducting molybdenum disulfide thin film using reactive magnetron sputtering technique at 300 °C for thin film transistors (TFTs) application. X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Field emission-scanning electron microscopy (FE-SEM) techniques were used to identify the structural, elemental compositional and morphological properties of the synthesized thin film. XRD and Raman data confirm the growth of hexagonal structure and FE-SEM images indicate the vertical aligned layered morphology. The fabricated TFT demonstrates excellent performance in terms of field-effect mobility of 24.17 cm2 V−1 s−1 and a high Ion/Ioff ratio of the order of 106." @default.
• W2942617175 created "2019-05-09" @default.
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• W2942617175 date "2019-09-01" @default.
• W2942617175 modified "2023-09-28" @default.
• W2942617175 title "Large area vertical aligned MoS2 layers toward the application of thin film transistor" @default.
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• W2942617175 doi "https://doi.org/10.1016/j.matlet.2019.04.117" @default.
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