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• W2942990627 abstract "Heterostructures based on two-dimensional (2D) transition metal dichalcogenides semiconductors are reported to be promising building-blocks for next-generation integrated optoelectronic systems, owing to their atomic thin interface and interface-induced properties. Previously reported works have mostly been directed to focus on the 2D/2D heterostructures, and their optoelectronic performance is still inferior to the expectations for practical applications, mainly attributed to their non-ideal optical absorption when the thickness is confined at atomic scale. In this work, we have reported on high sensitivity photodetectors based on one-dimensional (1D)/2D heterostructures consisting of CdS nanowire and WS2 nanosheets grown by direct chemical vapor deposition. The components of the heterostructures were confirmed by x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscope, photoluminescence and Raman spectra measurements, confirming the high quality heterostructures. Photodetectors were then fabricated based on the as-synthesized CdS/WS2 heterostructures, showing superior photodetection performances with a photoresponsivity of ∼50 A W−1 and an ultrahigh photodetectivity of ∼1012 Jones. Much higher responsivity of 5472 A W−1 and detectivity of 5 × 1013 Jones can be achieved through applying back gate voltage. The direct growth of such 1D/2D heterostructures may pave the way toward high performance integrated optoelectronics and systems." @default.
• W2942990627 created "2019-05-09" @default.
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• W2942990627 date "2019-06-03" @default.
• W2942990627 modified "2023-10-14" @default.
• W2942990627 title "Vapor growth of CdS nanowires/WS₂ nanosheet heterostructures with sensitive photodetections" @default.
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• W2942990627 doi "https://doi.org/10.1088/1361-6528/ab1f3c" @default.
• W2942990627 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/31051475" @default.
• W2942990627 hasPublicationYear "2019" @default.
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