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• W2944195645 abstract "Here we present a direct comparison between the activation of implanted Mg ions in N–polar and Ga–polar substrates to produce p-type GaN via symmetric multicycle rapid thermal annealing (SMRTA). Physical dopant activation was achieved by annealing in moderate nitrogen pressures (3.3 MPa) in conjunction with a bi-layer cap. Photoluminescence shows activation was more readily achieved for N–polar films with measured UV luminescence up to ∼15× as intense as yellow/green luminescence compared to ∼2.4× for Ga–polar films. The greater activation of N–polar material was primarily due to a higher thermal stability compared to Ga–polar films. This demonstration of implanted Mg activation by SMRTA enables a facile route toward next generation vertical devices." @default.
• W2944195645 created "2019-05-16" @default.
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• W2944195645 date "2019-05-08" @default.
• W2944195645 modified "2023-09-25" @default.
• W2944195645 title "Polarity dependent implanted p-type dopant activation in GaN" @default.
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• W2944195645 doi "https://doi.org/10.7567/1347-4065/ab1129" @default.
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