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- W2944202485 abstract "A new design concept is proposed to eliminate the substrate-assisted depletion effect that significantly degrades the breakdown voltage (BV) of conventional super junction-LDMOS.The key feature of the new concept is that a partial buried layer is implemented which compensates for the charge interaction between the p-substrate and SJ region,realizing high breakdown voltage and low on-resistance.Numerical simulation results indicate that the proposed device features high breakdown voltage,low on-resistance,and reduced sensitivity to doping imbalance in the pillars.In addition,the proposed device is compatible with smart power technology." @default.
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- W2944202485 date "2007-03-06" @default.
- W2944202485 modified "2023-09-26" @default.
- W2944202485 title "Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial n-Buried Layer" @default.
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