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• W2944289112 startingPage "146" @default.
• W2944289112 abstract "Intrinsic hydrogenated amorphous silicon (a-Si:H) thin films was prepared in remote low-frequency inductively coupled plasma chemical vapour deposition (ICP-CVD) system for surface passivation on single crystalline silicon (c-Si). The influences of deposition temperature and precursor gas flow rate on the physical properties of a-Si:H thin films and the passivation effect of a-Si:H/c-Si interfaces were investigated. High quality a-Si:H thin films with less vacancies and defects were fabricated in remote ICP-CVD by eliminating the direct impacting of energetic plasma radicals on deposition surface. The passivation performance on c-Si were also improved in remote ICP-CVD, a minority carrier lifetime ~2.32 × 10−3 s was achieved by fabricating 10 nm a-Si:H passivation layer on c-Si substrate." @default.
• W2944289112 created "2019-05-16" @default.
• W2944289112 creator A5001479848 @default.
• W2944289112 creator A5025998657 @default.
• W2944289112 creator A5051463344 @default.
• W2944289112 date "2019-09-01" @default.
• W2944289112 modified "2023-09-26" @default.
• W2944289112 title "Surface passivation of crystalline silicon by intrinsic a-Si:H films deposited in remote low frequency inductively coupled plasma" @default.
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• W2944289112 doi "https://doi.org/10.1016/j.apsusc.2019.05.063" @default.
• W2944289112 hasPublicationYear "2019" @default.
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