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- W2944640843 abstract "Diamond has been utilized for various applications such as ultra-precision cutting tools and power semiconductor devices. Chemical mechanical polishing (CMP) is an effective processing method for the planarization of diamond, but the removal mechanism of the carbon atoms in diamond CMP is still under debate. Here, the atomic mechanism of removal in diamond CMP with OH environment was investigated using the molecular dynamics (MD) simulation method of reactive force field (ReaxFF). The simulation results show that with chemical action alone, the substrate surface adsorbs O, H or OH to form C–O, C–H, C–OH, etc., but no carbon atoms are removed from the diamond substrate. However, when the mechanical sliding is added, some carbon atoms are removed in form of CO or CO2, and the other carbon atoms are removed by the attachment to abrasive. The formation of C–C bonds between the diamond substrate and the abrasive or the formation of C–O bonds is a prerequisite for subsequent sliding removal. This work contributes to understanding the removal mechanism of diamond CMP at the atomic level." @default.
- W2944640843 created "2019-05-16" @default.
- W2944640843 creator A5011650519 @default.
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- W2944640843 date "2019-08-01" @default.
- W2944640843 modified "2023-10-01" @default.
- W2944640843 title "Insights into the atomistic behavior in diamond chemical mechanical polishing with OH environment using ReaxFF molecular dynamics simulation" @default.
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- W2944640843 doi "https://doi.org/10.1016/j.commatsci.2019.05.001" @default.
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