Matches in SemOpenAlex for { <https://semopenalex.org/work/W2945008462> ?p ?o ?g. }
Showing items 1 to 74 of
74
with 100 items per page.
- W2945008462 abstract "This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with the different type of high-k materials such as silicon nitride (Si 3 N 4 ), aluminium oxide (Al 2 O 3 ), hafnium dioxide (HfO 2 ) and zirconium oxide (ZrO 2 ) using Silvaco ATLAS TCAD Tools. The simulation work initially is to validate the experimental work with the simulation data and then determine the performance of flash memory cell with the different type of high-k materials in term of memory window, program and erase characteristics and data retention. The memory window for flash memory cell without high-k material is 15.4V while for the memory window of 1/7nm of silicon dioxide (SiO 2 )/high-k material of four high-k materials for SiO 2 /Si 3 N 4 , SiO 2 /Al 2 O 3 , SiO 2 /HfO 2 and SiO 2 /ZrO 2 tunnel barrier are 23.0V, 20.0V, 25.4V and 26.0 respectively at the same P/E voltage of ±20V programming and erasing voltage. The data retention of four high-k materials shows better data retention from the conventional SiO 2 . The SiO 2 /Si 3 N 4 , SiO 2 /HfO 2 and SiO 2 /ZrO 2 tunnel barrier are retained by 56% (12.88V), 47% (11.94V) and 33% (8.58V) as compared to conventional SiO 2 are retained by 75% (11.6V) after 10 years of −1/1V gate stress. SiO 2 /Al 2 O 3 tunnel barrier with thickness 1/7nm shows an excellent result among others with 83% (16.60V) data are retained after 10 years of extrapolation." @default.
- W2945008462 created "2019-05-29" @default.
- W2945008462 creator A5020224801 @default.
- W2945008462 creator A5034110304 @default.
- W2945008462 creator A5034810043 @default.
- W2945008462 creator A5052942470 @default.
- W2945008462 creator A5053481441 @default.
- W2945008462 creator A5081313963 @default.
- W2945008462 date "2018-11-01" @default.
- W2945008462 modified "2023-10-14" @default.
- W2945008462 title "Graphene as Charge Storage Layer in Floating Gate Flash Memory with Highk Tunnel Barrier Engineering" @default.
- W2945008462 doi "https://doi.org/10.1109/scored.2018.8710905" @default.
- W2945008462 hasPublicationYear "2018" @default.
- W2945008462 type Work @default.
- W2945008462 sameAs 2945008462 @default.
- W2945008462 citedByCount "0" @default.
- W2945008462 crossrefType "proceedings-article" @default.
- W2945008462 hasAuthorship W2945008462A5020224801 @default.
- W2945008462 hasAuthorship W2945008462A5034110304 @default.
- W2945008462 hasAuthorship W2945008462A5034810043 @default.
- W2945008462 hasAuthorship W2945008462A5052942470 @default.
- W2945008462 hasAuthorship W2945008462A5053481441 @default.
- W2945008462 hasAuthorship W2945008462A5081313963 @default.
- W2945008462 hasConcept C119599485 @default.
- W2945008462 hasConcept C120398109 @default.
- W2945008462 hasConcept C127413603 @default.
- W2945008462 hasConcept C149635348 @default.
- W2945008462 hasConcept C171250308 @default.
- W2945008462 hasConcept C177950962 @default.
- W2945008462 hasConcept C191897082 @default.
- W2945008462 hasConcept C192562407 @default.
- W2945008462 hasConcept C194760766 @default.
- W2945008462 hasConcept C2776531357 @default.
- W2945008462 hasConcept C2779227376 @default.
- W2945008462 hasConcept C2779851234 @default.
- W2945008462 hasConcept C2780866740 @default.
- W2945008462 hasConcept C49040817 @default.
- W2945008462 hasConcept C534791751 @default.
- W2945008462 hasConcept C544956773 @default.
- W2945008462 hasConcept C546638069 @default.
- W2945008462 hasConceptScore W2945008462C119599485 @default.
- W2945008462 hasConceptScore W2945008462C120398109 @default.
- W2945008462 hasConceptScore W2945008462C127413603 @default.
- W2945008462 hasConceptScore W2945008462C149635348 @default.
- W2945008462 hasConceptScore W2945008462C171250308 @default.
- W2945008462 hasConceptScore W2945008462C177950962 @default.
- W2945008462 hasConceptScore W2945008462C191897082 @default.
- W2945008462 hasConceptScore W2945008462C192562407 @default.
- W2945008462 hasConceptScore W2945008462C194760766 @default.
- W2945008462 hasConceptScore W2945008462C2776531357 @default.
- W2945008462 hasConceptScore W2945008462C2779227376 @default.
- W2945008462 hasConceptScore W2945008462C2779851234 @default.
- W2945008462 hasConceptScore W2945008462C2780866740 @default.
- W2945008462 hasConceptScore W2945008462C49040817 @default.
- W2945008462 hasConceptScore W2945008462C534791751 @default.
- W2945008462 hasConceptScore W2945008462C544956773 @default.
- W2945008462 hasConceptScore W2945008462C546638069 @default.
- W2945008462 hasLocation W29450084621 @default.
- W2945008462 hasOpenAccess W2945008462 @default.
- W2945008462 hasPrimaryLocation W29450084621 @default.
- W2945008462 hasRelatedWork W1561729152 @default.
- W2945008462 hasRelatedWork W2038748484 @default.
- W2945008462 hasRelatedWork W2051104315 @default.
- W2945008462 hasRelatedWork W2063567393 @default.
- W2945008462 hasRelatedWork W2085195941 @default.
- W2945008462 hasRelatedWork W2121781414 @default.
- W2945008462 hasRelatedWork W2137501902 @default.
- W2945008462 hasRelatedWork W2147916935 @default.
- W2945008462 hasRelatedWork W2171862007 @default.
- W2945008462 hasRelatedWork W3023943004 @default.
- W2945008462 isParatext "false" @default.
- W2945008462 isRetracted "false" @default.
- W2945008462 magId "2945008462" @default.
- W2945008462 workType "article" @default.