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- W2945058947 abstract "This work presents a correlation study between gate-induced drain leakage (GIDL) increase and standard n-MOSFET degradation parameters (I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Dlin</sub> and I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Dsat</sub> ) due to Hot Carrier Injection (HCI) both for SiON and SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate nodes. The same mechanism is responsible for the changes in these n-MOSFET parameters, so we propose the use of a unique HCI lifetime model, including the GIDL increase in accumulation. The GIDL parameter degradation can be implemented into aging models in CAD libraries along with the degradation models for standard n-MOSFET parameters. We also discuss model limitations for high-K metal gate (HKMG) devices." @default.
- W2945058947 created "2019-05-29" @default.
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- W2945058947 date "2019-03-01" @default.
- W2945058947 modified "2023-10-16" @default.
- W2945058947 title "GIDL Increase Due to HCI Stress: Correlation Study of MOSFET Degradation Parameters and Modelling for Reliability Simulation" @default.
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- W2945058947 doi "https://doi.org/10.1109/irps.2019.8720590" @default.
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