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- W2945068310 abstract "Abstract In this work, we perform a numerical modeling of silicon thin film deposition for a photovoltaic application in a capacitive coupled plasma reactor (CCP) using RF excitation. Plasma equations are solved by finite element numerical method. The deposition is done by plasma of SiH4/Ar/H2 in low pressure and low temperature. The results provide the fundamental features of plasma discharge such as density, temperature and electrical potential. It is shown that the gas mixture used covers a large energy range, which entails a high deposition rate. Furthermore, the use of CCP reactor yields a uniform deposition without surface deterioration." @default.
- W2945068310 created "2019-05-29" @default.
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- W2945068310 date "2019-01-01" @default.
- W2945068310 modified "2023-09-27" @default.
- W2945068310 title "Numerical Modeling of Plasma Silicon Discharge for Photovoltaic Application" @default.
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- W2945068310 doi "https://doi.org/10.1016/j.matpr.2019.04.052" @default.
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