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• W2945137918 abstract "In this letter, we demonstrate the fabrication of flexible memristive devices using tungsten di-selenide (WSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) quantum dots (QDs) as the active layer. The WSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> QDs were synthesized by facile two-step technique consisting of solvothermal and sonication processes to utilize the charge-trapping sites in the memristive devices. The sizes of as-synthesized WSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> QDs, as determined from the transmission electron microscopy image, were in the range between 3 and 5 nm. Current-voltage (I-V) curves for the flexible memristive devices based on nanocomposites consisting of WSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> QDs sandwiched between two poly (methyl methacrylate) (PMMA) layers showed remarkable bi-stable behavior before and after bending. The ON/OFF ratio of the memory devices before and after bending were approximately 1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> and 1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , respectively. The devices showed the nonvolatile memory effect with a retention time of more than 7 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> s. The endurance number of ON/OFF switching cycles for the devices was 1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . The bipolar resistive switching behavior was described on the basis of the I-V results by analyzing the effect of space charge." @default.
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• W2945137918 date "2019-07-01" @default.
• W2945137918 modified "2023-10-16" @default.
• W2945137918 title "Flexible Memristive Device Based on WSe₂ Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers" @default.
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• W2945137918 doi "https://doi.org/10.1109/led.2019.2918701" @default.
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