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- W2945362795 abstract "In this work we present a physics-based semi-empirical large-signal model for GaN MIS-HEMTs, which introduces the non-segmented, smooth continuous equations to describe the static and dynamic characteristics of GaN MIS-HEMTs in different working regions. The unique physical effect of threshold voltage drift was considered for MIS-HEMTs in the current model, in addition to effects of the channel length modulation and the temperature drift. In addition, a current-controlled current source was used in the dynamic model to characterize the nonlinear capacitance including the gate-drain capacitance CGD, gate-source capacitance CGS and drain-source capacitance CDS at different operating voltages. The model is in excellent agreement with the experimental data for both drain current and capacitances over a typical range of applied voltages and temperatures." @default.
- W2945362795 created "2019-05-29" @default.
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- W2945362795 date "2019-06-01" @default.
- W2945362795 modified "2023-10-15" @default.
- W2945362795 title "A large-signal Pspice modeling of GaN-based MIS-HEMTs" @default.
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- W2945362795 doi "https://doi.org/10.1016/j.spmi.2019.05.023" @default.
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