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- W2945766518 abstract "n-GaAs and p-GaN wafer pairs are successfully bonded by direct wafer bonding technology.SEM results indicate that there is no bonding gap at the bonding interface.PL measurements indicate that the bonding process does not visibly change the crystal quality.The current-voltage characteristics at room temperature show that the bonded n-GaAs/p-GaN heterojunction is a Shockley diode and the ideality factor n is 1.08.This high quality bonded wafer of n-GaAs/p-GaN has great implications for the optoelectronic integration of GaAs and GaN semiconductor materials." @default.
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- W2945766518 date "2007-10-24" @default.
- W2945766518 modified "2023-09-23" @default.
- W2945766518 title "Direct Bonding of n-GaAs and p-GaN Wafers" @default.
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