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• W2945981330 startingPage "SC1027" @default.
• W2945981330 abstract "A thick and fully relaxed In0.05Ga0.95N layer was epitaxially grown on a GaN substrate after growing partially relaxed intermediate InGaN layers using tri-halide vapor phase epitaxy. In order to control the relaxation ratio of intermediate InGaN layers, a double intermediate structure with different growth rates (low growth rate and high growth rate modes) was adopted. By changing the first intermediate InGaN layer thickness, the relaxation ratio could be varied in the ranges between 25% and 59%. According to X-ray diffraction reciprocal space mapping measurements, a fully relaxed In0.05Ga0.95N layer was successfully grown on a partially relaxed intermediate In0.10Ga0.90N layer with the relaxation ratio of 32%. Thus, a mirror-like, fully relaxed and thick In0.05Ga0.95N layer could be grown with lattice matched to the intermediate InGaN layers by controlling the relaxation ratio." @default.
• W2945981330 created "2019-05-29" @default.
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• W2945981330 date "2019-05-17" @default.
• W2945981330 modified "2023-10-14" @default.
• W2945981330 title "Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy" @default.
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• W2945981330 doi "https://doi.org/10.7567/1347-4065/ab112c" @default.
• W2945981330 hasPublicationYear "2019" @default.
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