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• W2945987995 abstract "The doubly negative charge state of the carbon vacancy is a lifetime killer defect in n-type 4H-SiC. One way to reduce the concentration of this defect is by thermal oxidation. In this study, we electrically characterized n-type 4H-SiC epilayers that underwent dry thermal oxidation. While we confirm that the reduction of VC is accompanied by the formation of the previously identified ON1 and ON2 levels, we additionally report on the presence of two new shallow levels. These are found at 0.19 and 0.24 eV below the conduction band edge. Their nature is discussed on the basis of their thermal stability and formation kinetics. The former was studied up to 1600 °C, whereas the latter was carried out by performing oxidation in the 1200–1300 °C temperature range and in the 45 min-24 h time range." @default.
• W2945987995 created "2019-05-29" @default.
• W2945987995 creator A5001165154 @default.
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• W2945987995 date "2019-05-23" @default.
• W2945987995 modified "2023-09-23" @default.
• W2945987995 title "Electrically active deep levels formed by thermal oxidation of n-type 4H-SiC" @default.
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• W2945987995 doi "https://doi.org/10.1063/1.5090261" @default.
• W2945987995 hasPublicationYear "2019" @default.
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