FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2946365110> ?p ?o ?g. }

• W2946365110 endingPage "8450" @default.
• W2946365110 startingPage "8441" @default.
• W2946365110 abstract "Synthetic diamond films are routinely grown using chemical vapor deposition (CVD) techniques. Due to their extraordinary combination of intrinsic properties, they are used as the functional layers in various bio-optoelectronic devices. It is a challenge to grow the dimensional layers or porous structures that are required. This study reviews the fabrication of various porous diamond-based structures using linear antenna microwave plasma (LAMWP) chemical vapor deposition (CVD), a low-cost technology for growing diamond films over a large area (>1 m2) at low pressure (<100 Pa) and at low temperature (even at 350 °C). From a technological point of view, two different approaches, i.e., templated diamond growth using three different prestructured (macro-, micro-, and nanosized) porous substrates and direct bottom-up growth of ultra-nanoporous diamond (block-stone and dendritelike) films, are successfully employed to form diamond-based structures with controlled porosity and an enhanced surface area. As a bottom-up strategy, the LAMWP CVD system allows diamond growth at as high as 80% CO2 in the CH4/CO2/H2 gas mixture. In summary, the low-pressure and cold plasma conditions in the LAMWP system facilitate the growth on three-dimensionally prestructured substrates of various materials that naturally form porous self-standing diamond structures." @default.
• W2946365110 created "2019-05-29" @default.
• W2946365110 creator A5000631580 @default.
• W2946365110 creator A5027600836 @default.
• W2946365110 creator A5042539137 @default.
• W2946365110 creator A5042878807 @default.
• W2946365110 creator A5062404091 @default.
• W2946365110 creator A5084929122 @default.
• W2946365110 date "2019-05-14" @default.
• W2946365110 modified "2023-10-10" @default.
• W2946365110 title "Great Variety of Man-Made Porous Diamond Structures: Pulsed Microwave Cold Plasma System with a Linear Antenna Arrangement" @default.
• W2946365110 cites W1947429798 @default.
• W2946365110 cites W1969555886 @default.
• W2946365110 cites W1970829044 @default.
• W2946365110 cites W1979709465 @default.
• W2946365110 cites W1979956412 @default.
• W2946365110 cites W1985789163 @default.
• W2946365110 cites W1993100234 @default.
• W2946365110 cites W1998212388 @default.
• W2946365110 cites W2000813491 @default.
• W2946365110 cites W2001305249 @default.
• W2946365110 cites W2014538784 @default.
• W2946365110 cites W2014901401 @default.
• W2946365110 cites W2017318708 @default.
• W2946365110 cites W2019075279 @default.
• W2946365110 cites W2025531338 @default.
• W2946365110 cites W2027574834 @default.
• W2946365110 cites W2034787405 @default.
• W2946365110 cites W2045829751 @default.
• W2946365110 cites W2048089511 @default.
• W2946365110 cites W2054289116 @default.
• W2946365110 cites W2060618049 @default.
• W2946365110 cites W2067190472 @default.
• W2946365110 cites W2069828100 @default.
• W2946365110 cites W2075320962 @default.
• W2946365110 cites W2075910556 @default.
• W2946365110 cites W2078140025 @default.
• W2946365110 cites W2081108573 @default.
• W2946365110 cites W2083683463 @default.
• W2946365110 cites W2084723424 @default.
• W2946365110 cites W2085276290 @default.
• W2946365110 cites W2088058107 @default.
• W2946365110 cites W2088892730 @default.
• W2946365110 cites W2091131153 @default.
• W2946365110 cites W2092058632 @default.
• W2946365110 cites W2099691685 @default.
• W2946365110 cites W2101680132 @default.
• W2946365110 cites W2113810402 @default.
• W2946365110 cites W2115420929 @default.
• W2946365110 cites W2130174071 @default.
• W2946365110 cites W2137257108 @default.
• W2946365110 cites W2138535193 @default.
• W2946365110 cites W2157087807 @default.
• W2946365110 cites W2157347288 @default.
• W2946365110 cites W2164517490 @default.
• W2946365110 cites W2183984674 @default.
• W2946365110 cites W2228600703 @default.
• W2946365110 cites W2319759802 @default.
• W2946365110 cites W2410736825 @default.
• W2946365110 cites W2463520916 @default.
• W2946365110 cites W2474485327 @default.
• W2946365110 cites W2559477175 @default.
• W2946365110 cites W2560577546 @default.
• W2946365110 cites W2589056741 @default.
• W2946365110 cites W2590300099 @default.
• W2946365110 cites W2605504042 @default.
• W2946365110 cites W2727954141 @default.
• W2946365110 cites W2746084052 @default.
• W2946365110 cites W2783628000 @default.
• W2946365110 cites W2802997432 @default.
• W2946365110 cites W3124655723 @default.
• W2946365110 doi "https://doi.org/10.1021/acsomega.9b00323" @default.
• W2946365110 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/6648511" @default.
• W2946365110 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/31459933" @default.
• W2946365110 hasPublicationYear "2019" @default.
• W2946365110 type Work @default.
• W2946365110 sameAs 2946365110 @default.
• W2946365110 citedByCount "15" @default.
• W2946365110 countsByYear W29463651102019 @default.
• W2946365110 countsByYear W29463651102020 @default.
• W2946365110 countsByYear W29463651102021 @default.
• W2946365110 countsByYear W29463651102022 @default.
• W2946365110 countsByYear W29463651102023 @default.
• W2946365110 crossrefType "journal-article" @default.
• W2946365110 hasAuthorship W2946365110A5000631580 @default.
• W2946365110 hasAuthorship W2946365110A5027600836 @default.
• W2946365110 hasAuthorship W2946365110A5042539137 @default.
• W2946365110 hasAuthorship W2946365110A5042878807 @default.
• W2946365110 hasAuthorship W2946365110A5062404091 @default.
• W2946365110 hasAuthorship W2946365110A5084929122 @default.
• W2946365110 hasBestOaLocation W29463651101 @default.
• W2946365110 hasConcept C121332964 @default.
• W2946365110 hasConcept C159985019 @default.
• W2946365110 hasConcept C171250308 @default.
• W2946365110 hasConcept C192562407 @default.
• W2946365110 hasConcept C2776921476 @default.
• W2946365110 hasConcept C44838205 @default.
• W2946365110 hasConcept C48940184 @default.

• next